A Source-Drain Engineering Di-Electrically Modulated Double Gate TFET Based Label-Free Biosensor

The effect of drain doping and source material engineering of a dielectrically modulated double gate TFET (DMDGTFET) based label free biosensor has been analyzed in this article. The analysis of the biosensor has been done by introducing dielectric modulation in the cavity at the source side to sense the biomolecules. The trapped immobile biomolecules induce the drain current, hence the sensing of the biomolecules is based on the drain current of the device with respect to the different biomolecules. The drain current is higher for higher dielectric constant. Due to splitting of the drain region in three regions, one lower doping region sandwiched between two higher doping regions, it increases the tunnelling width and hence improves the ambipolar current. SILVACO ATLAS has been used for simulation purpose. Also, the proposed biosensor provides better performance without deteriorating the on current. The maximum sensitivity achieved is about 4.0×10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> for k=10.