Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited)

GaN-on-Si technology has recently emerged as a viable alternative to GaN-on-SiC technology for future communication applications. This paper highlights the R&D work carried out at the Nanyang Technological University (NTU) to push the performance boundaries of RF GaN-on-Si technologies. An overview of the recently established National GaN Technology Centre (NGTC) and its technologies offerings will also be presented.