TFET Based Biosensor Using Dielectric Modulation Technique

In this era of fast-growing low-power semiconductor technology, there is a need for a best-in-the-market health monitoring system using transistor-based devices. Different semi-conductor technologies are used in our health monitoring system. However, this paper is concentrating on the Bio-FETs. Using Bio-FETs, detecting biomolecules is very effortless and has superior detection capability, less power, less cost, and label-less detection. When compared to MOSFETs, the properties of the TFET-based Bio-FETs have made them more sustainable as MOSFETs have some major issues like short channel effects (SCEs) and leakage current caused by the thermionic emission of electrons. A theoretical restriction on the subthreshold slope (SS greater than 60 mv/Dec) of the FET limits device performance in terms of sensitivity and increases power consumption. To overcome these effects, TFET is becoming the workhorse in manufacturing transistor-based biosensors. This paper demonstrates the TFET-based biosensor by using dielectric modulating technique including various structures, and the underlying mechanisms covering interpretative and quasi-experimental research parameters anal-ysis such as sensitivity parameters and distinct factors influencing the sensitivity parameter.