$\beta$-Ga₂O₃-on-SiC RF MOSFETs $\beta$

In this letter, we demonstrate the ß-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-on-SiC RF power MOSFETs with peak transconductance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{g}_{\mathrm{m},\max})$</tex> of 57 mS/mm, output power density <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{P}_{\text{out}})/\text{power}$</tex> added efficiency (PAE) of 2.4 W/mm/27.4%and a peak PAE of 36.2%@2 GHz, benefiting from a heavily doped channel to reduce channel resistance and a high thermal conductivity SiC substrate to enhance heat dissipation. Meanwhile, we report the microwave noise characteristics of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\text{Ga}2\mathrm{O}_{3}$</tex> RF transistors with a low minimum-noise figure <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\text{NF}_{\min})$</tex> of 2.6 dB @2 GHz. <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\beta-\text{Ga}2\mathrm{O}_{3}$</tex> -on-SiC RF power MOSFETs with heavily doped channel verify the great promise for future high voltage, high power and low noise RF applications.