Advancing RF GaN HEMTs: A Perspective on Measurement and Characterization Techniques

Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) continue to play a critical role in radio frequency (RF) applications. Precise characterization of GaN HEMTs under realistic operating conditions is required for accurate modeling and device performance evaluation. This article presents a literature review of the various characterization techniques applied to GaN HEMTs with their associated challenges, including transient measurements, trap characterization, low-frequency to high-frequency device characterization methods, as well as thermal, near-field, and reliability measurements.