Design and Analysis of Passive-Integrated Absorptive Flat-Group-Delay RF Bandpass Filters in GaAs Technology for Digital Communications

A family of on-chip passive-integrated absorptive flat-group-delay RF bandpass filters (BPFs) in gallium arsenide (GaAs) technology is presented. These wideband BPFs feature broadband quasi-reflectionless behavior along with quasi-constant group-delay responses beyond their associated 3-dB-bandwidth (BW) ranges. Firstly. by means of a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pi $ </tex-math></inline-formula>-shape network composed of a reflective first-order BPF and two shunt identical lossy bandstop filters (BSFs), a two-port-absorptive RF BPF is engineered. To further increase the stopband attenuation levels, the extension of this filter concept to higher-rejection BPFs using <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</i> cascaded reflective single-pole BPF units and (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n} +1$ </tex-math></inline-formula>) replicas of a shunt lossy BSF is then approached. Subsequently, in order to equip such BPFs with higher-selectivity filtering responses, the development of input- and two-port-reflectionless BPFs with multiple transmission zeros (TZs) is addressed. Moreover, a multi-TZ flat-group-delay BPF with input-absorptive behavior is devised. It exploits a reflective BPF channel, which is shaped by a high-selectivity BPF unit with two close-to-passband TZs and a shunt series-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator that produces an additional TZ, along with a shunt absorptive BSF in a complementary-diplexer-based topology. Finally, by cascading two duplicated high-selectivity BPFs and the associated absorptive BSFs with a modified shunt series-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator in a back-to-back connection, a type of two-port-reflectionless BPF with multiple TZs is further engineered. Following this approach, a modified shunt lossy BSF instead of the previous shunt series-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator is employed in the overall reflectionless BPF to obtain a sharper-rejection passband and flatter group delay versus the corresponding beyond-3-dB BW. The RF operational foundations of these absorptive BPFs are detailed with analyses of their relevant lumped-element-based equivalent circuits. Furthermore, proof-of-concept prototypes for the five suggested RF BPFs are simulated, built, and measured to experimentally validate their design concepts for application in power-efficient high-data-rate digital-communication systems.

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Journal
IEEE Transactions on Circuits and Systems I Regular Papers
Published
2025-03-07
DOI
https://doi.org/10.1109/tcsi.2025.3546509
Citations
2
Primary Topic
Semiconductor Lasers and Optical Devices
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article
Field-Weighted Citation Impact
1.46
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article

Design and Analysis of Passive-Integrated Absorptive Flat-Group-Delay RF Bandpass Filters in GaAs Technology for Digital Communications

Xi Zhu, Roberto Gómez‐García, Li Yang, Narsin Iranpour
2 citations
IEEE Transactions on Circuits and Systems I Regular Papers
Semiconductor Lasers and Optical Devices
1.46
article

Design and Analysis of Passive-Integrated Absorptive Flat-Group-Delay RF Bandpass Filters in GaAs Technology for Digital Communications

Xi Zhu, Roberto Gómez‐García, Li Yang, Narsin Iranpour
article en
2 citations

Abstract

A family of on-chip passive-integrated absorptive flat-group-delay RF bandpass filters (BPFs) in gallium arsenide (GaAs) technology is presented. These wideband BPFs feature broadband quasi-reflectionless behavior along with quasi-constant group-delay responses beyond their associated 3-dB-bandwidth (BW) ranges. Firstly. by means of a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pi $ </tex-math></inline-formula>-shape network composed of a reflective first-order BPF and two shunt identical lossy bandstop filters (BSFs), a two-port-absorptive RF BPF is engineered. To further increase the stopband attenuation levels, the extension of this filter concept to higher-rejection BPFs using <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n</i> cascaded reflective single-pole BPF units and (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${n} +1$ </tex-math></inline-formula>) replicas of a shunt lossy BSF is then approached. Subsequently, in order to equip such BPFs with higher-selectivity filtering responses, the development of input- and two-port-reflectionless BPFs with multiple transmission zeros (TZs) is addressed. Moreover, a multi-TZ flat-group-delay BPF with input-absorptive behavior is devised. It exploits a reflective BPF channel, which is shaped by a high-selectivity BPF unit with two close-to-passband TZs and a shunt series-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator that produces an additional TZ, along with a shunt absorptive BSF in a complementary-diplexer-based topology. Finally, by cascading two duplicated high-selectivity BPFs and the associated absorptive BSFs with a modified shunt series-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator in a back-to-back connection, a type of two-port-reflectionless BPF with multiple TZs is further engineered. Following this approach, a modified shunt lossy BSF instead of the previous shunt series-<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">LC</i> resonator is employed in the overall reflectionless BPF to obtain a sharper-rejection passband and flatter group delay versus the corresponding beyond-3-dB BW. The RF operational foundations of these absorptive BPFs are detailed with analyses of their relevant lumped-element-based equivalent circuits. Furthermore, proof-of-concept prototypes for the five suggested RF BPFs are simulated, built, and measured to experimentally validate their design concepts for application in power-efficient high-data-rate digital-communication systems.

IEEE Transactions on Circuits and Systems I Regular PapersVol. 72(6)
University of Technology Sydney (AU)
Openalex Percentile: Top 19%
Semiconductor Lasers and Optical Devices
1.46
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