Reconfiguring hot-hole flux via polarity modulation of p-GaN in plasmonic Schottky architectures

While energetic plasmonic hot carriers in nonthermal equilibrium states have pushed the limits of energy conversion efficiency in plasmon-driven photocatalysts and optoelectronics, the acceleration of plasmonic hot-hole flux remains a challenge. Here, we demonstrate an approach to control the generation and injection nature of plasmonic hot holes released from Au nanomesh/p-type GaN (p-GaN) Schottky architecture by modulating polarity of p-GaN. This polarity modulation enhances the flux of hot holes into the plasmonic platform, thereby accelerating Landau damping stemming from increased effective heat capacity of hot electrons in the metallic nanomaterial. We observed that this strategy drives the intensified hot-hole flux even in non-hot spot areas, hinting at the prospect of leveraging the complete potential of the plasmonic device beyond usual hot spots. The polarity modulation in plasmonic Schottky device gives rise to opportunities for manipulating the nature of plasmonic hot carriers for future energy conversion devices.