Numerical analysis to enhance efficiency of Cu₂MgSnS₄-based solar cell by inserting V₂O₅ back surface field

Abstract Because of non-toxic, availability in great quantity and optimum bandgap, researchers are showing immense interest in Cu 2 MgSnS 4 (CMTS)-based solar cells at present. In this paper, the functional parameters of modeled novel Al/ITO/i-ZnO/CdS/CMTS/V 2 O 5 /Au photovoltaic cell structure is thoroughly explored by Solar Cell Capacitance Simulator (SCAPS-1D) simulation program. The J-V curves and electrical parameters obtained by numerical modeling of the reference Al/ITO/i-ZnO/CdS/CMTS/Mo photovoltaic cell structure having an efficiency of 0.78% is calibrated and compared with experiment results. The recombination loss at the back contact and the band misadjustment between the absorber and buffer layer prevent the desired results from being obtained. To boost efficiency, optimization is performed of thickness, doping, bulk defect density and defect density at interface of the different layers utilized in the solar cell structure. Furthermore, the effect of temperature and back contact work function on proposed solar cell structure is also evaluated. The highest efficiency of the optimized reference photovoltaic cell obtained is 22.04% utilizing Au as back contact. To reduce recombination loss, a new inorganic vanadium oxide (V 2 O 5 ) back surface field (BSF) layer is inserted between back contact and absorber layer. The optimization of proposed Al/ITO/i-ZnO/CdS/CMTS/V 2 O 5 /Au solar cell results in V OC of 1.02 V, J SC of 28.7 mA cm −2 , FF of 85.89% and efficiency of 25.2%.