Nanoscale Resist‐Free Patterning of Halogenated Zeolitic Imidazolate Frameworks by Extreme UV Lithography
Advancements in patterning techniques for metal-organic frameworks (MOFs) are crucial for their integration into microelectronics. However, achieving precise nanoscale control of MOF structures remains challenging. In this work, a resist-free method for patterning MOFs is demonstrated using extreme ultraviolet (EUV) lithography with a resolution of 40 nm. The role of halogen atoms in the linker and the effect of humidity are analyzed through in situ and near-ambient pressure synchrotron X-ray photoelectron spectroscopy. In addition to facilitating the integration of MOFs, the results offer valuable insights for developing the highly sought-after positive-tone EUV photoresists.
Authors
- Rob Ameloot (ORCID: https://orcid.org/0000-0003-3178-5480)
- Min Tu (ORCID: https://orcid.org/0000-0003-4751-3877)
- Yunhong Luo
- Tianlei Ma (ORCID: https://orcid.org/0000-0003-2911-4717)
- Pengyi Tang (ORCID: https://orcid.org/0000-0002-2306-095X)
- Jun Zhao (ORCID: https://orcid.org/0000-0001-9105-8678)
- Hui Zhang (ORCID: https://orcid.org/0000-0002-2508-4912)
- Weina Li (ORCID: https://orcid.org/0000-0003-3198-1115)
Institutions
- Chinese Academy of Sciences (CN)
- ShanghaiTech University (CN)
- State Key Laboratory of Transducer Technology (CN)
- Shanghai Advanced Research Institute (CN)
- Shanghai Institute of Microsystem and Information Technology (CN)
- University of Chinese Academy of Sciences (CN)
- KU Leuven (BE)
Publication Details
- Journal
- Advanced Science
- Published
- 2025-03-05
- DOI
- https://doi.org/10.1002/advs.202415804
- Citations
- 9
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 6.57
Funders
- National Natural Science Foundation of China
- Fonds Wetenschappelijk Onderzoek
- National Key Research and Development Program of China