Optimized Low-Power Design: Advanced Organic Semiconductor Material Properties and Fabrication Techniques for Organic Field-Effect Transistors

Many flexible electronic applications are being explored for the development of organic transistors. Typically, they are composed of polymeric substrates. Although spin-coating gives large-area and homogenous layers, low molecular order causes it to have an adequate mobility of only 1[Formula: see text]cm 2 /Vs or less when spun from a pure organic semiconductor (OSc) solution. Several layer-manufacturing methodologies have been suggested to solve this problem. The relative parameters of [Formula: see text]–[Formula: see text] stacking mode, [Formula: see text]–[Formula: see text] distance and [Formula: see text]–[Formula: see text] displacement have a significant impact on the charge transport process in any OSc layer. This review comprehensively discusses the current status of OTFT technologies, including material, device, architecture, various deposition techniques and the latest OFETs fabricated using this technique with improvements made in those devices to improve mobilities and on/off current ratios. The parameters observed for different printed transistors are also discussed herein.

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Publication Details

Journal
NANO
Published
2025-03-07
DOI
https://doi.org/10.1142/s1793292025300051
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.00
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article

Optimized Low-Power Design: Advanced Organic Semiconductor Material Properties and Fabrication Techniques for Organic Field-Effect Transistors

Balwinder Raj, Mamta Khosla, Yogesh Thakur
NANO
Semiconductor materials and devices
article

Optimized Low-Power Design: Advanced Organic Semiconductor Material Properties and Fabrication Techniques for Organic Field-Effect Transistors

Balwinder Raj, Mamta Khosla, Yogesh Thakur
article en

Abstract

Many flexible electronic applications are being explored for the development of organic transistors. Typically, they are composed of polymeric substrates. Although spin-coating gives large-area and homogenous layers, low molecular order causes it to have an adequate mobility of only 1[Formula: see text]cm 2 /Vs or less when spun from a pure organic semiconductor (OSc) solution. Several layer-manufacturing methodologies have been suggested to solve this problem. The relative parameters of [Formula: see text]–[Formula: see text] stacking mode, [Formula: see text]–[Formula: see text] distance and [Formula: see text]–[Formula: see text] displacement have a significant impact on the charge transport process in any OSc layer. This review comprehensively discusses the current status of OTFT technologies, including material, device, architecture, various deposition techniques and the latest OFETs fabricated using this technique with improvements made in those devices to improve mobilities and on/off current ratios. The parameters observed for different printed transistors are also discussed herein.

NANO
Dr. B. R. Ambedkar National Institute of Technology Jalandhar (IN)
Openalex Percentile: Top 97%
Semiconductor materials and devices
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