Optimized Low-Power Design: Advanced Organic Semiconductor Material Properties and Fabrication Techniques for Organic Field-Effect Transistors
Many flexible electronic applications are being explored for the development of organic transistors. Typically, they are composed of polymeric substrates. Although spin-coating gives large-area and homogenous layers, low molecular order causes it to have an adequate mobility of only 1[Formula: see text]cm 2 /Vs or less when spun from a pure organic semiconductor (OSc) solution. Several layer-manufacturing methodologies have been suggested to solve this problem. The relative parameters of [Formula: see text]–[Formula: see text] stacking mode, [Formula: see text]–[Formula: see text] distance and [Formula: see text]–[Formula: see text] displacement have a significant impact on the charge transport process in any OSc layer. This review comprehensively discusses the current status of OTFT technologies, including material, device, architecture, various deposition techniques and the latest OFETs fabricated using this technique with improvements made in those devices to improve mobilities and on/off current ratios. The parameters observed for different printed transistors are also discussed herein.
Authors
- Balwinder Raj (ORCID: https://orcid.org/0000-0002-3065-6313)
- Mamta Khosla (ORCID: https://orcid.org/0000-0002-4843-0160)
- Yogesh Thakur (ORCID: https://orcid.org/0000-0002-4227-0418)
Institutions
- Dr. B. R. Ambedkar National Institute of Technology Jalandhar (IN)
Publication Details
- Journal
- NANO
- Published
- 2025-03-07
- DOI
- https://doi.org/10.1142/s1793292025300051
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00