The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing

This paper investigates the impact of bond wire aging on differential mode (DM) electromagnetic interference (EMI) noise emissions in IGBTs under the influence of high-frequency ringing. Using a DC-DC buck converter composed of an IGBT half-bridge module as an example, the study analyzes the changes in the EMI spectrum caused by bond wire lift-off in both the time and frequency domains. The paper explains the generation mechanism of high-frequency oscillations induced by the interaction between the stray inductance of the DC link and the freewheeling diode. The study reveals that bond wire lift-off alters DM EMI noise emissions by affecting the switching characteristics of the IGBT. Additionally, an increase in the number of lift-off bond wires during ringing significantly enhances DM EMI noise emissions at and above the resonance frequency. The findings of this study provide a new perspective on the aging effects of power electronic devices and their impact on EMI.

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Publication Details

Journal
IEEE Transactions on Device and Materials Reliability
Published
2025-03-07
DOI
https://doi.org/10.1109/tdmr.2025.3548979
Citations
2
Primary Topic
Electromagnetic Compatibility and Noise Suppression
Type
article
Field-Weighted Citation Impact
1.46
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article

The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing

Sai Gao, Mingxing Du, Shuo Wang, Jianxiong Yang
2 citations
IEEE Transactions on Device and Materials Reliability
Electromagnetic Compatibility and Noise Suppression
1.46
article

The Influence of Bond Wire Aging on DM EMI Noise in IGBT Converters Considering High-Frequency Ringing

Sai Gao, Mingxing Du, Shuo Wang, Jianxiong Yang
article en
2 citations

Abstract

This paper investigates the impact of bond wire aging on differential mode (DM) electromagnetic interference (EMI) noise emissions in IGBTs under the influence of high-frequency ringing. Using a DC-DC buck converter composed of an IGBT half-bridge module as an example, the study analyzes the changes in the EMI spectrum caused by bond wire lift-off in both the time and frequency domains. The paper explains the generation mechanism of high-frequency oscillations induced by the interaction between the stray inductance of the DC link and the freewheeling diode. The study reveals that bond wire lift-off alters DM EMI noise emissions by affecting the switching characteristics of the IGBT. Additionally, an increase in the number of lift-off bond wires during ringing significantly enhances DM EMI noise emissions at and above the resonance frequency. The findings of this study provide a new perspective on the aging effects of power electronic devices and their impact on EMI.

IEEE Transactions on Device and Materials ReliabilityVol. 25(2)
Tianjin University of Technology (CN)
Affordable and clean energy
Openalex Percentile: Top 19%
Electromagnetic Compatibility and Noise Suppression
1.46
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