Highly-Efficient Broadband GaAs HBT Doherty Power Amplifier With Harmonic Control Technique for 5G Application

This brief presents the design and fabrication of a highly-efficient Doherty power amplifier (DPA) for 5G n77 and n78 bands. The proposed architecture is based on a 2-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m GaAs heterojunction bipolar transistor (HBT) process to realize a monolithic microwave integrated circuit (MMIC) with an area of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.7\times 1.4~{{\text {mm}}^{{2}}}$ </tex-math></inline-formula>. Additionally, An output network is designed in conjunction with the load modulation network on the Rogers 4350 PCB, which is augmented with high-order harmonic control circuit for efficiency enhancement. The proposed DPA, operating within the 3.1-4.2 GHz range, exhibits a fractional bandwidth over 30%, a saturated output power over 33.8 dBm, a saturated power-added efficiency (PAE) ranging from 39.6% to 44.9%, and a 6 dB power back-off (PBO) PAE of 42.3% to 46.1%.