Streamlined Behavioral Modeling of GaN HEMTs for Pulsed-Power Applications

A streamlined method to model GaN high electron mobility transistor’s (HEMT’s) behavior based on <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">I</i>–<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> measurements is proposed in this article. A model based on Angelov’s model is used to this end, modified to account for the device’s off-tail of the transconductance function and the steeper output conductance behavior in the ohmic regime, as well as the effects of self-heating. The resulting model features an equation for the equivalent circuit’s current source with its numerical parameters obtained from the step-wise fitting of the measurement data. The fitting helps with modeling the current-voltage dependency of a GaN HEMT in the cases when the input dataset provides insufficient number of operating points to assess all critical parameters of the Angelov model using standard techniques.