Analysis of structural, morphological, and optoelectrical properties of AMZO thin films grown by co-sputtering

Abstract This study explores the impact of post-deposition annealing on the structural, morphological, and optoelectrical characteristics of Aluminum-Magnesium co-doped Zinc Oxide (AMZO) thin films. These films, fabricated via direct current (DC) and radio frequency (RF) sputtering, serve as high-resistivity transparent (HRT) buffer layers and are crucial for optimizing device performance. This research examines the influence of post-deposition annealing at various temperatures to fine-tune the properties of AMZO thin films, focusing on the correlation between annealing parameters and resulting material characteristics. By elucidating the mechanisms through which annealing modifies the AMZO film properties, this work provides critical insights for tailoring the material’s optoelectrical behavior, particularly with the aim of enhancing its suitability for solar cell applications. The study emphasizes the significance of precise temperature control in achieving the desired properties, thereby contributing to the understanding and advancement of AMZO thin films in optoelectronic device design.