High-frequency characteristics of ultra-short gate MoS₂ transistors

Abstract Short channel transistors are gaining attention for high-frequency applications. MoS 2 transistors, with their atomically thin structure, exhibit excellent on/off switching and low intrinsic capacitance. This study employs the nonequilibrium Green’s function formalism to analyze their electronic properties and evaluate high-frequency performance under a sub-10 nm metal gate using a small-signal circuit model. The findings reveal that MoS 2 transistors can achieve cut-off frequencies in the terahertz range, even in the presence of electron–phonon scattering, and maintain excellent high-frequency characteristics as the gate length is reduced, demonstrating their potential for advanced high-frequency device applications.