Performance Optimization of Sulfonium-Functionalized Molecular Resists for EUV and Electron Beam Lithography

We report the synthesis and lithographic evaluation of a series of sulfonium-functionalized molecules nonchemically amplified resists (n-CARs) designed for high-resolution lithography. These molecular resists, built upon a rigid adamantane core, feature varied substitution positions (meta or para), side chains (methoxy or butoxy), and counteranions (CF3SO3–, BF4–, PF6–, and SbF6–). Our study highlights that meta-substitution and the incorporation of flexible butoxy side chains significantly enhance the film quality and lithographic performance. Notably, the ADMBu-TF resist, functionalized with CF3SO3– and meta-substituted butoxy chains, exhibits the best lithographic performance. Using extreme ultraviolet lithography, we achieved 15 nm line/space (L/S) patterns with a line-edge roughness of 2.2 nm, positioning this resist as a promising candidate for next-generation lithographic processes.

Authors

Institutions

Publication Details

Journal
ACS Applied Electronic Materials
Published
2025-03-07
DOI
https://doi.org/10.1021/acsaelm.5c00273
Citations
2
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
1.46

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Performance Optimization of Sulfonium-Functionalized Molecular Resists for EUV and Electron Beam Lithography

Shuangqing Wang, Rui Hu, Jinping Chen, Xudong Guo et al.
2 citations
ACS Applied Electronic Materials
Advancements in Photolithography Techniques
1.46
article

Performance Optimization of Sulfonium-Functionalized Molecular Resists for EUV and Electron Beam Lithography

Shuangqing Wang, Rui Hu, Jinping Chen, Xudong Guo, Yasin Ekinci, Yi Zeng, Dimitrios Kazazis, Michaela Vockenhuber, Zhuoran Liu, Peng Tian, Guoqiang Yang, Yi Li, Tianjun Yu
article en
2 citations

Abstract

We report the synthesis and lithographic evaluation of a series of sulfonium-functionalized molecules nonchemically amplified resists (n-CARs) designed for high-resolution lithography. These molecular resists, built upon a rigid adamantane core, feature varied substitution positions (meta or para), side chains (methoxy or butoxy), and counteranions (CF3SO3–, BF4–, PF6–, and SbF6–). Our study highlights that meta-substitution and the incorporation of flexible butoxy side chains significantly enhance the film quality and lithographic performance. Notably, the ADMBu-TF resist, functionalized with CF3SO3– and meta-substituted butoxy chains, exhibits the best lithographic performance. Using extreme ultraviolet lithography, we achieved 15 nm line/space (L/S) patterns with a line-edge roughness of 2.2 nm, positioning this resist as a promising candidate for next-generation lithographic processes.

ACS Applied Electronic MaterialsVol. 7(6)
Chinese Academy of Sciences (CN), Paul Scherrer Institute (CH), Technical Institute of Physics and Chemistry (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences
Openalex Percentile: Top 19%
Advancements in Photolithography Techniques
1.46
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.