Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

The p-i-n type perovskite solar cells with a nickel oxide (NiOx) hole transport layer in combination with self-assembled monolayers (SAMs) have a high power conversion efficiency (PCE) of over 26%. The surface properties of the SAM layer have a significant impact on the growth and crystallization of the perovskite film. In the meanwhile, defects formed during thermal annealing at the SAM layer and the perovskite layer interface would act as charge recombination centers, decreasing device performance and stability. To address these issues, this work introduces 3,4,5-trifluorophenylboronic acid (3,4,5-3FPBA) as the interfacial modification layer to improve the buried interface properties that enable better crystallization of the perovskite film. With the 3,4,5-3FPBA layer, based on the perovskite composition Cs<sub>0.05</sub>(FA<sub>0.98</sub>MA<sub>0.02</sub>)<sub>0.95</sub>Pb(I<sub>0.95</sub>Br<sub>0.05</sub>)<sub>3</sub>, the device efficiency increased from 21.99% to 24.02%. A similar improvement was observed for the perovskite composition Cs<sub>0.05</sub>FA<sub>0.82</sub>MA<sub>0.13</sub>Pb(I<sub>0.85</sub>Br<sub>0.15</sub>)<sub>3</sub>, where the device efficiency increased from 21.87% to 22.76%. The universality of interface modification has been confirmed. In addition, based on the perovskite composition Cs<sub>0.05</sub>FA<sub>0.82</sub>MA<sub>0.13</sub>Pb(I<sub>0.85</sub>Br<sub>0.15</sub>)<sub>3</sub>, the resulting cells showed improved thermal stability, maintaining 75% of its initial efficiency after 500 h of continuous heating at 85 °C for unencapsulated devices.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-03-07
DOI
https://doi.org/10.1021/acsami.4c21627
Citations
6
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
4.38

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article

Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

Kunpeng Guo, Xiaomei Gao, Lingpeng Yan, Jiansheng Yang et al.
6 citations
ACS Applied Materials & Interfaces
Perovskite Materials and Applications
4.38
article

Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

Kunpeng Guo, Xiaomei Gao, Lingpeng Yan, Jiansheng Yang, Lianping Zhang, Qun Luo, Zhi‐Yun Li, Changzeng Ding, Bin Fan, Yongzhen Yang, Zhenhua Zhao, Rong Huang, Qingyong Tian, Chang‐Qi Ma
article en
6 citations

Abstract

The p-i-n type perovskite solar cells with a nickel oxide (NiOx) hole transport layer in combination with self-assembled monolayers (SAMs) have a high power conversion efficiency (PCE) of over 26%. The surface properties of the SAM layer have a significant impact on the growth and crystallization of the perovskite film. In the meanwhile, defects formed during thermal annealing at the SAM layer and the perovskite layer interface would act as charge recombination centers, decreasing device performance and stability. To address these issues, this work introduces 3,4,5-trifluorophenylboronic acid (3,4,5-3FPBA) as the interfacial modification layer to improve the buried interface properties that enable better crystallization of the perovskite film. With the 3,4,5-3FPBA layer, based on the perovskite composition Cs<sub>0.05</sub>(FA<sub>0.98</sub>MA<sub>0.02</sub>)<sub>0.95</sub>Pb(I<sub>0.95</sub>Br<sub>0.05</sub>)<sub>3</sub>, the device efficiency increased from 21.99% to 24.02%. A similar improvement was observed for the perovskite composition Cs<sub>0.05</sub>FA<sub>0.82</sub>MA<sub>0.13</sub>Pb(I<sub>0.85</sub>Br<sub>0.15</sub>)<sub>3</sub>, where the device efficiency increased from 21.87% to 22.76%. The universality of interface modification has been confirmed. In addition, based on the perovskite composition Cs<sub>0.05</sub>FA<sub>0.82</sub>MA<sub>0.13</sub>Pb(I<sub>0.85</sub>Br<sub>0.15</sub>)<sub>3</sub>, the resulting cells showed improved thermal stability, maintaining 75% of its initial efficiency after 500 h of continuous heating at 85 °C for unencapsulated devices.

ACS Applied Materials & InterfacesVol. 17(11)
Åbo Akademi University (FI), Chinese Academy of Sciences (CN), Interface (United States) (US), Suzhou Institute of Nano-tech and Nano-bionics (CN), Kunshan Govisionox Optoelectronic (China) (CN), Division of Materials Science and Engineering (AU), Taiyuan University of Technology (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Openalex Percentile: Top 6%
Perovskite Materials and Applications
4.38
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