Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography

We introduce a novel nonalkyl tin oxo cluster, CNU-TOC-01(4C-C), synthesized through a reflux-based solution reaction using SnCl<sub>2</sub>, H<sub>2</sub>O, and pyrazole, which permits scalable production and molecular customization. Using field desorption-time-of-flight mass spectrometry (FD-TOF MS) and small-angle X-ray scattering (SAXS), CNU-TOC-01(4C-C) is characterized as a cyclic cluster with the molecular formula Sn<sub>4</sub>Cl<sub>3</sub>(C<sub>3</sub>N<sub>2</sub>H<sub>4</sub>)(C<sub>3</sub>N<sub>2</sub>H<sub>3</sub>)H<sub>4</sub>O<sub>8</sub>. The cluster size was measured to be 11.6 Å by SAXS and estimated to be 11.1 Å lengthwise in quantum chemical calculation. The synthesized material exhibits an extreme ultraviolet (EUV) linear absorption coefficient of 20.7 μm<sup>-1</sup>. Initial application in EUVL and electron beam lithography (EBL) achieved fine line and space patterns with the potential for ultrafine resolutions upon optimization. CNU-TOC-01(4C-C)'s high etch resistance underscores its exceptional suitability as an advanced resist material for future lithographic applications.

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Publication Details

Journal
Inorganic Chemistry
Published
2025-03-05
DOI
https://doi.org/10.1021/acs.inorgchem.5c00495
Citations
8
Primary Topic
Advancements in Photolithography Techniques
Type
article
Field-Weighted Citation Impact
5.84

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article

Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography

Hyung‐Bae Moon, Kyuyoung Heo, Geonhwa Kim, Minyeob Kim et al.
8 citations
Inorganic Chemistry
Advancements in Photolithography Techniques
5.84
article

Synthesis and Characterizations of a Nonalkyl Tin Oxo Cluster and its Application as High EUV Absorption Coefficient and Etch Resistant Inorganic Resist for EUV Lithography

Hyung‐Bae Moon, Kyuyoung Heo, Geonhwa Kim, Minyeob Kim, Hee-Seon Lee, Siwoo Noh, Sang Taek Heo, Jiyoung Bang, Sangsul Lee, Hyeok Yun, Ki-Jeong Kim, Cheol‐Min Kim, Hyun‐Dam Jeong
article en
8 citations

Abstract

We introduce a novel nonalkyl tin oxo cluster, CNU-TOC-01(4C-C), synthesized through a reflux-based solution reaction using SnCl<sub>2</sub>, H<sub>2</sub>O, and pyrazole, which permits scalable production and molecular customization. Using field desorption-time-of-flight mass spectrometry (FD-TOF MS) and small-angle X-ray scattering (SAXS), CNU-TOC-01(4C-C) is characterized as a cyclic cluster with the molecular formula Sn<sub>4</sub>Cl<sub>3</sub>(C<sub>3</sub>N<sub>2</sub>H<sub>4</sub>)(C<sub>3</sub>N<sub>2</sub>H<sub>3</sub>)H<sub>4</sub>O<sub>8</sub>. The cluster size was measured to be 11.6 Å by SAXS and estimated to be 11.1 Å lengthwise in quantum chemical calculation. The synthesized material exhibits an extreme ultraviolet (EUV) linear absorption coefficient of 20.7 μm<sup>-1</sup>. Initial application in EUVL and electron beam lithography (EBL) achieved fine line and space patterns with the potential for ultrafine resolutions upon optimization. CNU-TOC-01(4C-C)'s high etch resistance underscores its exceptional suitability as an advanced resist material for future lithographic applications.

Inorganic ChemistryVol. 64(10)
Pohang University of Science and Technology (KR), Korea Post (KR), Chonnam National University Hospital (KR), BioChem Technology (United States) (US), Korea Research Institute of Chemical Technology (KR), Pohang Accelerator Laboratory
Ministry of Trade, Industry and Energy, National Research Foundation of Korea
Openalex Percentile: Top 4%
Advancements in Photolithography Techniques
5.84
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