Stacking-Dependent Correlated Gap and Kondo Peak in the Heterophase Bilayer with Picometer-Level Interlayer Shift

Two-dimensional heterojunctions provide a versatile platform for exploring various quantum properties. Here, we create bilayer 1T/2H-NbSe<sub>2</sub> heterophase junctions and realize two types of stacking configurations with picometer-level lattice shifts. By high-resolution scanning tunneling microscopy/spectroscopy, we found that the electronic states are highly dependent on the stacking configurations of the 1T layer on the 2H one. Unexpectedly, a tiny shift between the two configurations (about 110 pm in the lateral direction and 30 pm in the vertical one) leads to a change from a correlated gap lattice into a Kondo peak lattice. Moreover, both of them show a spin-related pseudogap width of 2-3 meV close to the Fermi level, which splits under the external magnetic field. Our study demonstrates the important role of delicate stacking configurations on the many-body physics and spin-related phenomena in the heterophase junctions.

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Publication Details

Journal
ACS Nano
Published
2025-03-05
DOI
https://doi.org/10.1021/acsnano.4c16830
Citations
1
Primary Topic
Physics of Superconductivity and Magnetism
Type
article
Field-Weighted Citation Impact
1.26

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article

Stacking-Dependent Correlated Gap and Kondo Peak in the Heterophase Bilayer with Picometer-Level Interlayer Shift

Huixia Yang, Fawei Zheng, Han Yang, Yeliang Wang et al.
1 citations
ACS Nano
Physics of Superconductivity and Magnetism
1.26
article

Stacking-Dependent Correlated Gap and Kondo Peak in the Heterophase Bilayer with Picometer-Level Interlayer Shift

Huixia Yang, Fawei Zheng, Han Yang, Yeliang Wang, Xuan Song, Liwei Liu, Zexuan Liu, Yuan Bo Huang, Yugui Yao, Kai Yang, Jia‐Tao Sun, Si Chen, Yaoyao Chen
article en
1 citations

Abstract

Two-dimensional heterojunctions provide a versatile platform for exploring various quantum properties. Here, we create bilayer 1T/2H-NbSe<sub>2</sub> heterophase junctions and realize two types of stacking configurations with picometer-level lattice shifts. By high-resolution scanning tunneling microscopy/spectroscopy, we found that the electronic states are highly dependent on the stacking configurations of the 1T layer on the 2H one. Unexpectedly, a tiny shift between the two configurations (about 110 pm in the lateral direction and 30 pm in the vertical one) leads to a change from a correlated gap lattice into a Kondo peak lattice. Moreover, both of them show a spin-related pseudogap width of 2-3 meV close to the Fermi level, which splits under the external magnetic field. Our study demonstrates the important role of delicate stacking configurations on the many-body physics and spin-related phenomena in the heterophase junctions.

ACS NanoVol. 19(10)
Beijing Institute of Technology (CN), Chinese Academy of Sciences (CN), Integrated Optoelectronics (Norway) (NO), FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Beihang University (CN), Ministry of Industry and Information Technology (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 24%
Physics of Superconductivity and Magnetism
1.26
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