Grafted AlGaAs/GeSn optical pumping laser operating up to 130 K
Group IV GeSn double-heterostructure (DHS) lasers offer unique advantages of a direct bandgap and CMOS compatibility. However, further improvements in the laser performance have been bottlenecked by the limited junction properties of GeSn through conventional epitaxy and wafer bonding. This work leverages semiconductor grafting to synthesize and characterize optically pumped ridge edge-emitting lasers with an AlGaAs nanomembrane transfer-printed onto an epitaxially grown GeSn substrate, interfaced by an ultrathin Al2O3 layer. The uniform formation of this nanometer-thin ALD-Al2O3 interlayer and structural integrity of the grafted heterojunction are confirmed in STEM. The grafted AlGaAs/GeSn DHS lasers show a lasing threshold of 11.06 mW at 77 K and a maximum lasing temperature of 130 K. These results highlight the potential of the grafting technique for enhancing charge carrier and optical field confinements, paving the way for room-temperature electrically injected GeSn lasers.
Authors
- Jiarui Gong (ORCID: https://orcid.org/0000-0002-7304-4763)
- Sudip Acharya (ORCID: https://orcid.org/0009-0007-7569-5838)
- Alireza Abrand (ORCID: https://orcid.org/0000-0003-0912-1979)
- Shining Xu (ORCID: https://orcid.org/0009-0008-6982-3482)
- Solomon Ojo
- Hryhorii V. Stanchu (ORCID: https://orcid.org/0000-0002-2987-1251)
- Yang Liu (ORCID: https://orcid.org/0009-0003-6682-1186)
- Shui-Qing Yu (ORCID: https://orcid.org/0000-0002-4439-3729)
- L. J. Mawst (ORCID: https://orcid.org/0000-0001-6843-5332)
- Parsian K. Mohseni (ORCID: https://orcid.org/0000-0002-9377-7454)
- Kai Sun (ORCID: https://orcid.org/0000-0003-1745-9136)
- Jie Zhou (ORCID: https://orcid.org/0000-0003-1393-3662)
- Zetian Mi (ORCID: https://orcid.org/0000-0001-9494-7390)
- Yiran Li (ORCID: https://orcid.org/0009-0007-5880-9282)
- Yi Lu (ORCID: https://orcid.org/0000-0002-6197-1471)
- Dong Liu (ORCID: https://orcid.org/0000-0001-5060-6682)
- Zhenqiang Ma (ORCID: https://orcid.org/0000-0001-9214-1342)
- Daniel Vincent (ORCID: https://orcid.org/0000-0002-4845-0604)
- Samuel Haessly (ORCID: https://orcid.org/0000-0002-2840-5427)
- Jianping Shen
- Yifu Guo
Institutions
- University of Wisconsin–Madison (US)
- Rochester Institute of Technology (US)
- University of Michigan (US)
- University of Arkansas at Fayetteville (US)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-03-01
- DOI
- https://doi.org/10.1063/5.0241572
- Citations
- 5
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 3.65
Funders
- National Science Foundation
- Air Force Office of Scientific Research