Towards a next-generation hybrid switch: Challenges and insights on the parallelization of SiC-MOSFET and Si-IGBT

The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (silicon-insulated gate bipolar transistor) in parallel with a SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor), highlighting the maincharacteristics and challenges to obtain a cost-effective device. Simulations in PLECS and LT-Spice reveal significant phenomena that arise during the conduction and switching of HyS devices. Experimental tests conducted on a double pulse test circuit validate the initial analyses and compare HyS switching losses with the standard solution based on IGBT. Finally, some insights on this technology are provided.