Ferroelectricity in Orthorhombic Zirconia Thin Films

Ferroelectric fluorite oxides such as hafnium (HfO<sub>2</sub>)-based materials are one of the most promising candidates for future large-scale integrated circuits (ICs), while zirconia (ZrO<sub>2</sub>)-based fluorite materials, which have the same structure as HfO<sub>2</sub> and <b>more abundant resources and lower cost of raw materials</b>, are usually thought to be anti- or ferroelectric-like. Here, we report a remanent polarization (<i>P</i><sub><i>r</i></sub>) of ∼15 μC/cm<sup>2</sup> in orthorhombic ZrO<sub>2</sub> thin films at 77 K. This ferroelectricity arises from an electric field-induced antiferroelectric to ferroelectric phase transition, which is particularly noticeable at 77 K. Our work reveals the ferroelectricity in ZrO<sub>2</sub> thin films and offers a new pathway to understand the origin of ferroelectricity in fluorite oxides.

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Publication Details

Journal
Nano Letters
Published
2025-03-06
DOI
https://doi.org/10.1021/acs.nanolett.4c05612
Citations
7
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
5.11

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article

Ferroelectricity in Orthorhombic Zirconia Thin Films

Qi Liu, Yuanmin Zhu, Zengxu Xu, Xianglong Li et al.
7 citations
Nano Letters
Ferroelectric and Negative Capacitance Devices
5.11
article

Ferroelectricity in Orthorhombic Zirconia Thin Films

Qi Liu, Yuanmin Zhu, Zengxu Xu, Xianglong Li, Mingqiang Gu, Yihao Yang, Lang Chen, Mao Ye, Jingxuan Li, Songbai Hu
article en
7 citations

Abstract

Ferroelectric fluorite oxides such as hafnium (HfO<sub>2</sub>)-based materials are one of the most promising candidates for future large-scale integrated circuits (ICs), while zirconia (ZrO<sub>2</sub>)-based fluorite materials, which have the same structure as HfO<sub>2</sub> and <b>more abundant resources and lower cost of raw materials</b>, are usually thought to be anti- or ferroelectric-like. Here, we report a remanent polarization (<i>P</i><sub><i>r</i></sub>) of ∼15 μC/cm<sup>2</sup> in orthorhombic ZrO<sub>2</sub> thin films at 77 K. This ferroelectricity arises from an electric field-induced antiferroelectric to ferroelectric phase transition, which is particularly noticeable at 77 K. Our work reveals the ferroelectricity in ZrO<sub>2</sub> thin films and offers a new pathway to understand the origin of ferroelectricity in fluorite oxides.

Nano LettersVol. 25(11)
Harbin Institute of Technology (CN), Dongguan University of Technology (CN), Southern University of Science and Technology (CN), Guangzhou University (CN), Great Bay University, Nanjing University (CN)
Natural Science Foundation of Guangdong Province, Science, Technology and Innovation Commission of Shenzhen Municipality, Guangdong Province Introduction of Innovative R&D Team, National Key Research and Development Program of China
Openalex Percentile: Top 5%
Ferroelectric and Negative Capacitance Devices
5.11
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