A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput

The rising demand for high-density and high-performance NAND Flash is unprecedented, due to the expansion of data within enterprise SSDs, which fueled by the growth of the artificial intelligence industry. Both sequential- and random-access performance must improve to accommodate high-speed and large data transfers between a NAND Flash and its controller. Furthermore, improved reliability, and effective read and write performance continue to be crucial factors for QLC NAND Flash.

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Publication Details

Published
2025-02-16
DOI
https://doi.org/10.1109/isscc49661.2025.10904748
Citations
5
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
3.65
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article

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput

Wonsun Park, K. Jeong, Wanik Cho, Sooyeol Chai et al.
5 citations
Semiconductor materials and devices
3.65
article

A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput

Wonsun Park, K. Jeong, Wanik Cho, Sooyeol Chai, Sun‐Young Jung, Sanghoon Oh, Youngjun Kwak, Taehun Park, Changwan Ha, Hwang Huh, Jayoon Goo, Kichang Gwon, Jinhyun Ban, Cheoljoong Park, Kayoung Cho, Jiseong Mun, Gwihan Ko, Sechun Park, H.J. Park, Seungpil Lee, Eunwoo Jo, Gwan Park, Won Kook Choi, Rezaul Haque, Taisik Shin, Jongseok Jung, Sooyong Park, Soon‐Jong Jeong, Dauni Kim, Minchol Shin, Eunho Yang, Sunghwa Ok, Tae Hyoung Cho, Yushin Ahn, Junyoun Lim, Peng Zhang, Jae Hyun Park, Jongwoo Kim, Youngil Kim, Sangkyu Lee, Jongsun Park, Tian Hang, Jungdal Choi, Kun-Ok Ahn, Woopyo Jeong, Chang-Ha Ryu, Dongkyu Yoon, Chan‐Hui Jeong
article en
5 citations

Abstract

The rising demand for high-density and high-performance NAND Flash is unprecedented, due to the expansion of data within enterprise SSDs, which fueled by the growth of the artificial intelligence industry. Both sequential- and random-access performance must improve to accommodate high-speed and large data transfers between a NAND Flash and its controller. Furthermore, improved reliability, and effective read and write performance continue to be crucial factors for QLC NAND Flash.

SK Group (United States) (US), SK Group (South Korea) (KR)
Affordable and clean energy
Openalex Percentile: Top 8%
Semiconductor materials and devices
3.65
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