An Open-Source Monte Carlo Simulator for High-<i>Z</i> Semiconductor Detectors With a Charge Cloud Discretization Method

A Monte Carlo simulator is presented to evaluate the spectroscopic response of high-Z semiconductor pixel radiation detectors starting from the first principles of physical laws. It performs simulation in three different domains: electrostatic fields, photon-matter interaction, and photo-generated charge-carriers transport. A sampling algorithm is proposed to address the issue of fast and accurate computations of charge cloud dynamics in the presence of both diffusion and electrostatic repulsion effects, avoiding direct numerical integration of the induced current equation stated by the Shockley-Ramo theorem under a constant electric field hypothesis. The simulator is written as an object-oriented programming (OOP) source code repository, relying on the integration between MATLAB and COMSOL Multiphysics, and can be run with one executable script. The simulator architecture is presented, followed by a detailed explanation of all the physical models and implemented simulation strategies. The simulator is validated with experimental energy spectra acquired with a radiation detection system based on cadmium zinc telluride (CdZnTe) pixel detectors and ultralow-noise front-end electronics with state-of-the-art energy resolution.

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Publication Details

Journal
IEEE Transactions on Nuclear Science
Published
2025-03-06
DOI
https://doi.org/10.1109/tns.2025.3548909
Citations
1
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
0.73

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article

An Open-Source Monte Carlo Simulator for High-Z Semiconductor Detectors With a Charge Cloud Discretization Method

Iurii A. Eremeev, Filippo Mele, Jacopo Quercia, G. Bertuccio
1 citations
IEEE Transactions on Nuclear Science
Advanced Semiconductor Detectors and Materials
0.73
article

An Open-Source Monte Carlo Simulator for High-Z Semiconductor Detectors With a Charge Cloud Discretization Method

Iurii A. Eremeev, Filippo Mele, Jacopo Quercia, G. Bertuccio
article en
1 citations

Abstract

A Monte Carlo simulator is presented to evaluate the spectroscopic response of high-Z semiconductor pixel radiation detectors starting from the first principles of physical laws. It performs simulation in three different domains: electrostatic fields, photon-matter interaction, and photo-generated charge-carriers transport. A sampling algorithm is proposed to address the issue of fast and accurate computations of charge cloud dynamics in the presence of both diffusion and electrostatic repulsion effects, avoiding direct numerical integration of the induced current equation stated by the Shockley-Ramo theorem under a constant electric field hypothesis. The simulator is written as an object-oriented programming (OOP) source code repository, relying on the integration between MATLAB and COMSOL Multiphysics, and can be run with one executable script. The simulator architecture is presented, followed by a detailed explanation of all the physical models and implemented simulation strategies. The simulator is validated with experimental energy spectra acquired with a radiation detection system based on cadmium zinc telluride (CdZnTe) pixel detectors and ultralow-noise front-end electronics with state-of-the-art energy resolution.

IEEE Transactions on Nuclear ScienceVol. 72(4)
Istituto Nazionale di Fisica Nucleare, Sezione di Milano (IT), Politecnico di Milano (IT)
Ministero dell'Università e della Ricerca
Openalex Percentile: Top 31%
Advanced Semiconductor Detectors and Materials
0.73
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