Impact of Sulfurization Temperature on the Formation and Properties of Chalcogenide Perovskites

Chalcogenide perovskites have gained attention as alternative semiconductor materials, yet their experimental investigation remains limited. This study investigates the synthesis and characterization of a series of chalcogenide perovskite powder samples via the sulfurization of oxide precursors at different temperatures. Zr- and Hf-based chalcogenide perovskites adopted a perovskite structure with a <i>Pnma</i> space group, while Ti-based chalcogenides formed hexagonal phases. The minimum synthesis temperature varied among materials and was correlated with the strength of the A cation-oxygen bonds. The synthesized chalcogenide perovskites exhibit bandgaps suitable for solar cell absorption layers, and the photoluminescence (PL) results indicate that SrZrS₃, SrHfS₃, CaZrS₃, and CaHfS₃ are promising candidates for light-emitting semiconductors.