Controllable Hydrothermal Synthesis of 1D β-Ga2O3 for Solar-Blind Ultraviolet Photodetection

Gallium oxide (Ga₂O₃), an ultrawide bandgap semiconductor, is an ideal material for solar-blind photodetectors, but challenges such as low responsivity and response speed persist. In this paper, one-dimensional (1D) Ga₂O₃ nanorods were designed to achieve high photodetection performance due to their effective light absorption and light field confinement. Through modulating source concentration, pH value, temperature, and reaction time, 1D β-Ga₂O₃ nanorods were controllably fabricated using a cost-effective hydrothermal method, followed by post-annealing. The nanorods had a diameter of ~500 nm, length from 0.5 to 3 μm, and structure from nanorods to spindles, indicating that different β-Ga₂O₃ nanorods can be utilized controllably through tuning reaction parameters. The 1D β-Ga₂O₃ nanorods with a high length-to-diameter ratio were chosen to construct metal-semiconductor-metal type photodetectors. These devices exhibited a high responsivity of 8.0 × 10^-4 A/W and detectivity of 4.58 × 10⁹ Jones under 254 nm light irradiation. The findings highlighted the potential of 1D Ga₂O₃ nanostructures for high-performance solar-blind ultraviolet photodetectors, paving the way for future integrable deep ultraviolet optoelectronic devices.