Effects of Wide Bandgap Devices on the Inverter Performance and Efficiency for Residential PV Applications

With power demands continuously growing, the penetration of renewable energy resources, particularly solar photovoltaic (PV) systems, across the residential sector has been extensive. A voltage source inverter (VSI) is the key element for efficiently processing energy conversion and connecting PV systems to home loads or utility grids. The operation of this inverter relies heavily on power-switching devices, which suffer from larger power losses due to the conventional semiconductors used based on silicon (Si) material. The new materials of wide bandgap (WBG) semiconductors, for example, gallium nitride (GaN) and silicon carbide (SiC), provide remarkably distinct characteristics of semiconductor devices to minimize power loss and boost the inverter’s operational capabilities. This research paper assesses the effects of integrating SiC-MOSFET devices into VSIs in order to improve the switching behavior and efficiency level. An experimental double-pulse testing (DPT) circuit was configured and set up for investigating the switching characterization of SiC-MOSFETs compared to the widely used Si-IGBTs. Under various operating circumstances, the switching behavior of two different types of power transistors was tested while their turning-on and turning-off losses were measured. The VSI based on SiC and Si transistors was simulated to examine the performance of the inverter. The results reveal that incorporating SiC-MOSFETs into the VSI substantially enhances the switching operation and reduces total power losses while increasing the efficiency compared to the inverter based on Si-IGBTs.