REFault: A Fault Injection Platform for Rowhammer Research on DDR5 Memory

DDR5 is showing increased resistance to Rowhammer attacks compared to previous generations. The minimum hammer count (HCmin) is a metric to assess the susceptibility of the DRAM substrate to Rowhammer. Due to the lack of a generic platform that allows disabling refresh commands, there is currently no way to determine the HCmin of DDR5 UDIMMs. We address this gap with REFault, a low-cost fault injection system that allows altering DDR5 commands on-the-fly. REFault is made from a configurable DRAM fault injection interposer and a custom-designed injection controller. We leverage REFault to temporarily disable refresh commands on a commodity system, and determine, for the first time, the HC min of two DDR5 devices from major DRAM manufacturers. We show that the HC min is as low as 16 k activations, which has not improved compared to DDR4 devices. We conclude that the increased resistance to Rowhammer in DDR5 devices comes from improved mitigations rather than the DRAM substrate itself.

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Publication Details

Journal
Proceedings of the Microarchitecture Security Conference
Published
2025-03-01
DOI
https://doi.org/10.46586/uasc.2025.001
Primary Topic
Advanced Data Storage Technologies
Type
article
Field-Weighted Citation Impact
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article

REFault: A Fault Injection Platform for Rowhammer Research on DDR5 Memory

Patrick Jattke, Kaveh Razavi, Stefan Gloor
Proceedings of the Microarchitecture Security Conference
Advanced Data Storage Technologies
article

REFault: A Fault Injection Platform for Rowhammer Research on DDR5 Memory

Patrick Jattke, Kaveh Razavi, Stefan Gloor
article en

Abstract

DDR5 is showing increased resistance to Rowhammer attacks compared to previous generations. The minimum hammer count (HCmin) is a metric to assess the susceptibility of the DRAM substrate to Rowhammer. Due to the lack of a generic platform that allows disabling refresh commands, there is currently no way to determine the HCmin of DDR5 UDIMMs. We address this gap with REFault, a low-cost fault injection system that allows altering DDR5 commands on-the-fly. REFault is made from a configurable DRAM fault injection interposer and a custom-designed injection controller. We leverage REFault to temporarily disable refresh commands on a commodity system, and determine, for the first time, the HC min of two DDR5 devices from major DRAM manufacturers. We show that the HC min is as low as 16 k activations, which has not improved compared to DDR4 devices. We conclude that the increased resistance to Rowhammer in DDR5 devices comes from improved mitigations rather than the DRAM substrate itself.

Proceedings of the Microarchitecture Security Conference
ETH Zurich (CH)
Openalex Percentile: Top 96%
Advanced Data Storage Technologies
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REFault: A Fault Injection Platform for Rowhammer Research on DDR5 Memory — Patrick Jattke, Kaveh Razavi, et al. · Proceedings of the Microarchitecture Security Conference (2025) | TGRS Research Map | TGRS