Electronic respond of Au/n-Si Schottky barrier diodes with PVP interlayer doped by Nd2O3 particles

Abstract This study looks at the effects of neodymium oxide (Nd 2 O 3 ) nanoparticles doped in the polyvinyl pyrrolidone (PVP) thin film that sits between a metal and a semiconductor on the electrical characteristics and conduction mechanism of Schottky Barrier Diodes (SBDs). A microwave-assisted technique is employed to create the Nd 2 O 3 nanostructure. The processed Nd 2 O 3 nanostructure’s mean crystalline scale, surface morphology, pureness, and optical characteristics are ascertained by X-ray diffraction pattern, Field Emission-Scanning Electron Microscopy, Electron-Dispersive X-ray analysis, and ultraviolet–visible spectroscopy, respectively. By measuring the I–V characteristics at ± 3.8 V and comparing them, the Thermionic Emission, modified Norde technique, and Cheung functions are applied for calculating the main electronic variables of prepared SBDs including the ideality coefficient ( n ), leak current ( I 0 ), the height measure of electric potential barrier ( $${\Phi }_{B0}$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>Φ</mml:mi> <mml:mrow> <mml:mi>B</mml:mi> <mml:mn>0</mml:mn> </mml:mrow> </mml:msub> </mml:math> ), shunt ( R sh ), and series ( R s ) resistances. Additionally, the conduction processes of the electric current in positive and negative biases are examined, as well as the surface/trap states density ( N ss ) depend on energy at forward bias. It is found that the interfacial layer improves the rectifying ratio by decreasing n , I 0 , N ss and raising BH, shunt resistance ( R sh ). For use in nanoscale electrical and optoelectronic devices and circuits, PVP:Nd 2 O 3 thin film can therefore be a good substitute for an interfacial layer.