Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit

Herein, we present a novel method for junction temperature monitoring of GaN HEMT devices to achieve real-time temperature perception at different locations on the device surface. Through sputtering patterned Ti/Pt thermistor strips on the surface of a GaN HEMT device to construct an on-chip array junction temperature monitoring unit, the thermal distribution of the device during operation is fully reflected. The developed temperature monitoring unit exhibited a desirable temperature coefficient of resistance of 0.183%/°C in the range of 25 °C to 205 °C. Comparison with the thermal imager shows that the integrated temperature monitoring unit can accurately reflect the real-time temperature with a monitoring accuracy of more than 95%, which helps to improve the long-term reliability of GaN power devices under actual application conditions of high frequency and high power density.