Insulated Gate Bipolar Transistor Junction Temperature Estimation Technology for Traction Inverters Using a Thermal Model

This study proposes a method for estimating the junction temperature of power semiconductors, particularly IGBTs (Insulated Gate Bipolar Transistors) and diodes. Traditional temperature measurement methods using NTC (Negative Temperature Coefficient) sensors have limitations in reflecting dynamic conditions in real time, as temperature changes take time to reach the sensors. To address this, this study proposes a junction temperature estimation method using RC curve fitting and a thermal impedance model. This model represents the thermal behavior of IGBTs and diodes using a Foster thermal network that considers the resistance and capacitance of the heat transfer path. In particular, transient temperature estimation considering thermal coupling enables the prediction of temperature changes in IGBTs and diodes. To verify the proposed temperature estimation method, experiments were conducted to build the model based on data measured with an infrared thermal camera and NTC sensors. The model’s estimated results were compared with actual values across 25 operating regions, achieving a maximum MAE (Mean Absolute Error) of 2.26 °C. A comparative analysis of first-, second-, third-, and fourth-order Foster networks revealed that, while higher orders improve accuracy, gains beyond the second order are minimal relative to computational demands. This study contributes to enhancing not only the reliability of power semiconductor modules but also minimizing the temperature margin for inverters by estimating the junction temperature with better dynamic performance than that achieved by NTC sensors.