Impacts of growth oxygen pressure and laser fluence on microwave tunings of Ba0.8Sr0.2TiO3 thin films

The impacts of growth oxygen pressure and laser energy in the pulsed laser deposition on the structural, chemical, and electrical properties of Ba0.8Sr0.2TiO3 ferroelectric thin films were investigated. The relative Ba: Sr: Ti ratio in the films was correlated with the capacitance C–voltage V tuning characteristics for the application of microwave tunable capacitors. An enhanced C–V tunability higher than 4:1 was obtained at 1.2 J/cm2 and 40 mTorr and the quality factor Q exhibited resonant pattern as functions of frequency (1–10 GHz) and applied electric field (0–233 kV/cm). Second-order microwave filters were derived from the interdigital capacitor covering the microwave L (1–2 GHz), S (2–4 GHz), and C (4–8 GHz) bands.

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Publication Details

Journal
Applied Physics Letters
Published
2025-03-01
DOI
https://doi.org/10.1063/5.0250890
Citations
1
Primary Topic
Ferroelectric and Piezoelectric Materials
Type
article
Field-Weighted Citation Impact
0.52

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article

Impacts of growth oxygen pressure and laser fluence on microwave tunings of Ba0.8Sr0.2TiO3 thin films

Zixiong Liu, Changdong Liu, Zongquan Gu, Haotian Gao
1 citations
Applied Physics Letters
Ferroelectric and Piezoelectric Materials
0.52
article

Impacts of growth oxygen pressure and laser fluence on microwave tunings of Ba0.8Sr0.2TiO3 thin films

Zixiong Liu, Changdong Liu, Zongquan Gu, Haotian Gao
article en
1 citations

Abstract

The impacts of growth oxygen pressure and laser energy in the pulsed laser deposition on the structural, chemical, and electrical properties of Ba0.8Sr0.2TiO3 ferroelectric thin films were investigated. The relative Ba: Sr: Ti ratio in the films was correlated with the capacitance C–voltage V tuning characteristics for the application of microwave tunable capacitors. An enhanced C–V tunability higher than 4:1 was obtained at 1.2 J/cm2 and 40 mTorr and the quality factor Q exhibited resonant pattern as functions of frequency (1–10 GHz) and applied electric field (0–233 kV/cm). Second-order microwave filters were derived from the interdigital capacitor covering the microwave L (1–2 GHz), S (2–4 GHz), and C (4–8 GHz) bands.

Applied Physics LettersVol. 126(9)
Fudan University (CN), Quantum Devices (United States) (US), Shanghai Fudan Microelectronics (China) (CN)
National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality
Openalex Percentile: Top 41%
Ferroelectric and Piezoelectric Materials
0.52
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