Advancing the reliability of wide bandgap semiconductors through in-situ transmission electron microscopy

A systematic review of in-situ TEM of of wide bandgap semiconductor materials and devices offers guidance that could reduce failure rates in the future, strengthening applications in power electronics, new energy, and other fields.

Authors

Ryan A. Nelson (ORCID: https://orcid.org/0000-0003-0763-1094)

Publication Details

Journal: Scilight
Published: 2025-03-04
DOI: https://doi.org/10.1063/10.0036189
Primary Topic: Advanced Electron Microscopy Techniques and Applications
Type: article
Field-Weighted Citation Impact: 0.00

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article

Advancing the reliability of wide bandgap semiconductors through in-situ transmission electron microscopy

Ryan A. Nelson

Mar 4, 2025

Scilight

Advanced Electron Microscopy Techniques and Applications

article

Advancing the reliability of wide bandgap semiconductors through in-situ transmission electron microscopy

Ryan A. Nelson

March 4, 2025article en

Abstract

ScilightVol. 2025(10)

Affordable and clean energy

Openalex Percentile: Top 98%

Advanced Electron Microscopy Techniques and Applications

DOI Open Access PDF OpenAlex

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Advancing the reliability of wide bandgap semiconductors through in-situ transmission electron microscopy — Ryan A. Nelson · Scilight (2025) | TGRS Research Map | TGRS