Conductance, continuity, and ferromagnetic percolation thresholds in thin films

Classical percolation models predict the metal-insulator transition and the onset of the long-range ferromagnetic order at the same topological continuity threshold. We tested this prediction in thin films of ferromagnetic CoPd and found a dramatic difference between the conductance and magnetic thresholds. While the long-range ferromagnetic phase develops at or very close to the continuity threshold, the transition from the metal-like to insulator-like conductance develops in films several times thinner. We argue that atomically narrow low resistance gaps intersecting the fractal network of metallic clusters provide a consistent explanation of the effect. We identify the conduction threshold as the point in discontinuous films at which the resistance of intergranular junctions exceeds the quantum resistance mark.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-03-04
DOI
https://doi.org/10.1103/physrevb.111.104201
Citations
2
Primary Topic
Theoretical and Computational Physics
Type
article
Field-Weighted Citation Impact
2.52
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article

Conductance, continuity, and ferromagnetic percolation thresholds in thin films

A. Gerber, G. Kopnov
2 citations
Physical review. B./Physical review. B
Theoretical and Computational Physics
2.52
article

Conductance, continuity, and ferromagnetic percolation thresholds in thin films

A. Gerber, G. Kopnov
article en
2 citations

Abstract

Classical percolation models predict the metal-insulator transition and the onset of the long-range ferromagnetic order at the same topological continuity threshold. We tested this prediction in thin films of ferromagnetic CoPd and found a dramatic difference between the conductance and magnetic thresholds. While the long-range ferromagnetic phase develops at or very close to the continuity threshold, the transition from the metal-like to insulator-like conductance develops in films several times thinner. We argue that atomically narrow low resistance gaps intersecting the fractal network of metallic clusters provide a consistent explanation of the effect. We identify the conduction threshold as the point in discontinuous films at which the resistance of intergranular junctions exceeds the quantum resistance mark.

Physical review. B./Physical review. BVol. 111(10)
Tel Aviv University (IL)
Openalex Percentile: Top 13%
Theoretical and Computational Physics
2.52
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