Effects of Residual Stress on the Ferroelectric Properties of Al<sub>0.8</sub>Sc<sub>0.2</sub>N Films Sandwiched Between Pt or W Electrodes
In this work, the impacts of the residual stress on the structural and ferroelectric properties of Al0.8Sc0.2N films clamped with different metal electrodes (Pt and W) were investigated. The Pt/Al<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\mathbf {0.8}}$ </tex-math></inline-formula>Sc0.2N/Pt capacitors exhibited enhanced ferroelectric performance, with coercive fields (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {c}}$ </tex-math></inline-formula>) reduced by 0.2 MV/cm, leakage currents reduced by one order of magnitude and stable polarization switching across frequencies. These improvements are attributed to better crystallographic orientation and larger grain sizes driven by tensile stress. In contrast, W/Al0.8Sc0.2N/W capacitors showed larger leakage currents, higher <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E} _{\text {c}}$ </tex-math></inline-formula>, and a greater susceptibility to breakdown. Moreover, the W samples showed diminished retention characteristics, with a 50% loss in nonswitched polarization at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula> s compared to the Pt counterparts. These issues were related to the compressive stress between W and Al0.8Sc0.2N, resulting in more defects that impeded polarization switching. The findings suggest that the engineering of stress through electrode selection is essential for optimizing the performance of AlScN-based ferroelectric devices.
Authors
- Bochang Li (ORCID: https://orcid.org/0000-0002-8195-6842)
- Jiuren Zhou (ORCID: https://orcid.org/0000-0002-0915-5354)
- Cizhe Fang (ORCID: https://orcid.org/0009-0005-9466-0919)
- Genquan Han (ORCID: https://orcid.org/0000-0001-5140-4150)
- Siying Zheng (ORCID: https://orcid.org/0000-0001-5957-4824)
- Yan Liu (ORCID: https://orcid.org/0000-0001-5583-0587)
- Xiaoxi Li (ORCID: https://orcid.org/0000-0002-0422-6328)
- Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
- Xiangyu Zeng (ORCID: https://orcid.org/0009-0008-6890-4619)
- Yuan Fang (ORCID: https://orcid.org/0009-0004-7278-6740)
- Zhifan Wu
Institutions
- Xidian University (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-03-04
- DOI
- https://doi.org/10.1109/ted.2025.3545391
- Citations
- 5
- Primary Topic
- Acoustic Wave Resonator Technologies
- Type
- article
- Field-Weighted Citation Impact
- 3.37
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Fundamental Research Funds for the Central Universities