Design and Analysis of a 22.6-to-73.9 GHz Low-Noise Amplifier for 5G NR FR2 and NR-U Multiband/Multistandard Communications

This article presents the analysis and design of a 22.6-to-73.9 GHz ultra-wideband low-noise amplifier (LNA) with flat in-band power gain for millimeter-wave applications, supporting all allocated fifth-generation new radio (5G NR) frequency range 2 (FR2) bands at 24/28/39/47 GHz, as well as the potential 5G NR-U bands within the unlicensed 57–71 GHz spectrum. The proposed LNA consists of two amplifier stages and achieves ultra-wideband performance by utilizing various bandwidth extension techniques. It introduces a synergistic equalization technique that integrates shunt feedback and dual inductive peaking for design harmony of optimized bandwidth, noise reduction, and stability compared to reported methods. Additionally, a resonant feedback compensation equalization (RFCE) technique is presented to mitigate high-frequency gain roll-off, enhance gain flatness, and further expand the operation bandwidth. The principles of gain, bandwidth, and noise improvement are analyzed theoretically. To validate the proposed techniques, an LNA is designed and fabricated utilizing the IHP SG13G2 0.13-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m silicon-germanium (SiGe) technology, featuring peak <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{T}/f_{\text {MAX}}$ </tex-math></inline-formula> of 350/450 GHz. The measurement results indicate significantly enhanced gain flatness, extended bandwidth, and improved noise figure (NF). Specifically, the proposed amplifier shows a 15.2 dB peak gain, −7.4 to −2.8 dBm output in 1-dB compression point power (OP1dB), and 4.06–4.94 dB NF in a 3-dB bandwidth from 22.6 to 73.9 GHz. The circuit occupies a compact core area of 0.06 mm2 and consumes 17.5 mW power consumption from a 1.2 V supply.

Authors

Institutions

Publication Details

Journal
IEEE Journal of Solid-State Circuits
Published
2025-03-04
DOI
https://doi.org/10.1109/jssc.2025.3545463
Citations
34
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
Field-Weighted Citation Impact
24.83

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Design and Analysis of a 22.6-to-73.9 GHz Low-Noise Amplifier for 5G NR FR2 and NR-U Multiband/Multistandard Communications

Kiat Seng Yeo, Xianghui Chen, Kaixue Ma, Keping Wang et al.
34 citations
IEEE Journal of Solid-State Circuits
Radio Frequency Integrated Circuit Design
24.83
article

Design and Analysis of a 22.6-to-73.9 GHz Low-Noise Amplifier for 5G NR FR2 and NR-U Multiband/Multistandard Communications

Kiat Seng Yeo, Xianghui Chen, Kaixue Ma, Keping Wang, Zenglong Zhao, Nengxu Zhu, Bing Liu, Fanyi Meng, Zhen Yang
article en
34 citations

Abstract

This article presents the analysis and design of a 22.6-to-73.9 GHz ultra-wideband low-noise amplifier (LNA) with flat in-band power gain for millimeter-wave applications, supporting all allocated fifth-generation new radio (5G NR) frequency range 2 (FR2) bands at 24/28/39/47 GHz, as well as the potential 5G NR-U bands within the unlicensed 57–71 GHz spectrum. The proposed LNA consists of two amplifier stages and achieves ultra-wideband performance by utilizing various bandwidth extension techniques. It introduces a synergistic equalization technique that integrates shunt feedback and dual inductive peaking for design harmony of optimized bandwidth, noise reduction, and stability compared to reported methods. Additionally, a resonant feedback compensation equalization (RFCE) technique is presented to mitigate high-frequency gain roll-off, enhance gain flatness, and further expand the operation bandwidth. The principles of gain, bandwidth, and noise improvement are analyzed theoretically. To validate the proposed techniques, an LNA is designed and fabricated utilizing the IHP SG13G2 0.13-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m silicon-germanium (SiGe) technology, featuring peak <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$f_{T}/f_{\text {MAX}}$ </tex-math></inline-formula> of 350/450 GHz. The measurement results indicate significantly enhanced gain flatness, extended bandwidth, and improved noise figure (NF). Specifically, the proposed amplifier shows a 15.2 dB peak gain, −7.4 to −2.8 dBm output in 1-dB compression point power (OP1dB), and 4.06–4.94 dB NF in a 3-dB bandwidth from 22.6 to 73.9 GHz. The circuit occupies a compact core area of 0.06 mm2 and consumes 17.5 mW power consumption from a 1.2 V supply.

IEEE Journal of Solid-State CircuitsVol. 60(9)
Tianjin University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 0%
Radio Frequency Integrated Circuit Design
24.83
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.