Dynamic Nonlinear Resistance Model for a Power MOSFET in an Oscillatory RLC Circuit

This paper presents the development of a new M<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">atlab mosfet</small> model specifically designed for RLC circuits. The key contribution is the formulation of a novel equation that accurately captures the device behavior across subthreshold, above-threshold regions and at threshold point, addressing limitations in existing models. The developed model treats the <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> as a variable resistance element, with the resistance changing dynamically at each instant, enabling the solution of differential equations governing the RLC circuit. Curve fitting and refinement were conducted based on experimental results, leading to a close match between the simulations and experimental data. The model was tested with triangle, sinusoidal and quadrilateral gate voltages, and the simulation results show good match with the experimental data, demonstrating the model’s accuracy. It provides a straightforward way to predict performance, making it easier to refine and optimize the design gate voltage before physical implementation. This work provides a solid foundation for <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> modeling in oscillatory RLC circuits, which can be applied to a wide range of power electronics applications.