Controllable p-Type Doping Strategy for High-Performance 2D Material Complementary Inverters
Controllable doping is required to modulate the electrical properties of the semiconductor devices. Such controllability is a particular issue in p-type doping for two-dimensional (2D) semiconductors. Here, we present a controllable doping strategy for modulating carrier density and threshold voltage of WSe<sub>2</sub> transistors via surface oxidation at 200 °C in air. The hole density in the WSe<sub>2</sub> channel can be precisely modulated from 1 × 10<sup>11</sup> cm<sup>-2</sup> to 3.5 × 10<sup>12</sup> cm<sup>-2</sup> by increasing oxidation duration, while its carrier mobility is virtually unaffected, maintaining a high value of 94.3 cm<sup>2</sup>·V<sup>-1</sup>·s<sup>-1</sup>. This controllable doping method can help to achieve balanced carrier transport in the n-type and p-type transistors in CMOS devices. The doped p-type WSe<sub>2</sub> transistor in a CMOS inverter resulted in a high gain of 52 and a lower static power of 0.256 nW at a bias voltage of 1 V. Therefore, our findings might pave the way for reliable fabrication of high-performance 2D electronic circuits.
Authors
- Zhenda Xie (ORCID: https://orcid.org/0000-0003-2060-3063)
- Juqing Liu (ORCID: https://orcid.org/0000-0002-6499-2796)
- Zhong Yan (ORCID: https://orcid.org/0000-0003-2586-9426)
- Jiawei Xue
- Yingchun Cheng (ORCID: https://orcid.org/0000-0002-8495-9184)
- Hao Wu (ORCID: https://orcid.org/0000-0002-0967-1914)
- Zheng Wu
Institutions
- Nanjing Tech University (CN)
- Nanjing University of Information Science and Technology (CN)
- Laboratoire de physique des Solides (FR)
- Yanshan University (CN)
- Beijing Institute of Optoelectronic Technology (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Center for High Pressure Science and Technology Advanced Research (CN)
- State Key Laboratory of Metastable Materials Science and Technology
- National Laboratory of Solid State Microstructures
- Nanjing University (CN)
Publication Details
- Journal
- ACS Applied Materials & Interfaces
- Published
- 2025-03-04
- DOI
- https://doi.org/10.1021/acsami.4c20474
- Citations
- 5
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 2.59
Funders
- National Natural Science Foundation of China
- China Postdoctoral Science Foundation
- Natural Science Foundation of Jiangsu Province
- Startup Foundation for Introducing Talent of Nanjing University of Information Science and Technology