Method for Mitigating Single Event Transients in Bandgap Reference Based on Dual Modular Redundancy

Based on 180 nm commercial BCD process, the effects of single event transient effect on bandgap reference circuit are studied and simulated, and a radiation-hardened-by-design based on dual modular redundancy technology is proposed to mitigate the effects of SET. The SET detection circuit composed of built-in threshold comparator is used to realize real-time dynamic detection of reference voltage, and the influence of SET is further isolated by pulse widening technology, which ensures that the reference voltage can recover quickly under small jump when BGR is incident by high-energy particle. The experimental results show that under the input voltage range of 2.9 V∼4.5 V and the linear energy transfer value of high-energy particles is equal to 100 MeV·cm 2 /mg, the maximum jump of reference voltage caused by SET decreases from 2.791 V to 38 mV, the recovery time decreases from 800 ns to 18 ns, and the SET mitigation ability reaches 98.3%. Compared with the traditional RC hardening scheme, this method has obvious advantages, the area optimization is 28.09%, and the recovery time is increased by more than 99%.