Development and Optimization of a Penta-Magnetic Tunnel Junction Circuit Integrated with Hybrid Transmission Gate Logic for Efficient Low-Power and High-Speed Performance

In response to the ever-increasing need for fast, low-power circuits, conventional CMOS-based designs are becoming increasingly unsuitable, particularly for use in logic circuits and memory devices. The multi-state behavior of Magnetic Tunnel Junction (MTJ) circuits has attracted attention because of their potential in non-volatile memory and logic operations. To achieve the targeted reductions in power consumption and increases in switching speed, it is essential to integrate these circuits with performance-optimizing logic gates. To overcome the drawbacks of traditional circuits, we present a new hybrid circuit that combines penta-magnetic tunnel junction (penta-MTJ) technology with hybrid transmission gate logic (HTGL). By minimizing static power dissipation and ensuring faster gate operations, the HTGL approach improves switching performance, while the penta-MTJ uses several magnetic states to enable improved memory storage. Standard CMOS process technology was used for the circuit’s design and simulation. Power consumption, switching delay, and reliability were among the performance parameters examined. Power consumption was found to be 38% lower in the penta-MTJ-HTGL circuit that was proposed as opposed to conventional CMOS technology. Compared to traditional MTJ-based systems, our 25% reduction in switching delay (4.2 ns) is a huge improvement. The suggested circuit was also shown to be robust in reliability testing, which demonstrated a data retention accuracy of 98% under different operating situations. Combining Hybrid Transmission Gate Logic with Penta-Magnetic Tunnel Junctions offers a potential answer for applications requiring minimal power at high speeds. The findings point to considerable gains in efficiency and speed of switching, which might find utility in logic circuits, next-generation memory devices, and new nanoelectronics uses. This study paves the way for more investigation into the integration of magnetic and logic components in high-performance circuits for use in next-generation computer systems.

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Publication Details

Journal
Journal of Nanoelectronics and Optoelectronics
Published
2024-12-01
DOI
https://doi.org/10.1166/jno.2024.3701
Primary Topic
Magnetic properties of thin films
Type
article
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article

Development and Optimization of a Penta-Magnetic Tunnel Junction Circuit Integrated with Hybrid Transmission Gate Logic for Efficient Low-Power and High-Speed Performance

S. Shanmuga Raju, B. Paulchamy
Journal of Nanoelectronics and Optoelectronics
Magnetic properties of thin films
article

Development and Optimization of a Penta-Magnetic Tunnel Junction Circuit Integrated with Hybrid Transmission Gate Logic for Efficient Low-Power and High-Speed Performance

S. Shanmuga Raju, B. Paulchamy
article en

Abstract

In response to the ever-increasing need for fast, low-power circuits, conventional CMOS-based designs are becoming increasingly unsuitable, particularly for use in logic circuits and memory devices. The multi-state behavior of Magnetic Tunnel Junction (MTJ) circuits has attracted attention because of their potential in non-volatile memory and logic operations. To achieve the targeted reductions in power consumption and increases in switching speed, it is essential to integrate these circuits with performance-optimizing logic gates. To overcome the drawbacks of traditional circuits, we present a new hybrid circuit that combines penta-magnetic tunnel junction (penta-MTJ) technology with hybrid transmission gate logic (HTGL). By minimizing static power dissipation and ensuring faster gate operations, the HTGL approach improves switching performance, while the penta-MTJ uses several magnetic states to enable improved memory storage. Standard CMOS process technology was used for the circuit’s design and simulation. Power consumption, switching delay, and reliability were among the performance parameters examined. Power consumption was found to be 38% lower in the penta-MTJ-HTGL circuit that was proposed as opposed to conventional CMOS technology. Compared to traditional MTJ-based systems, our 25% reduction in switching delay (4.2 ns) is a huge improvement. The suggested circuit was also shown to be robust in reliability testing, which demonstrated a data retention accuracy of 98% under different operating situations. Combining Hybrid Transmission Gate Logic with Penta-Magnetic Tunnel Junctions offers a potential answer for applications requiring minimal power at high speeds. The findings point to considerable gains in efficiency and speed of switching, which might find utility in logic circuits, next-generation memory devices, and new nanoelectronics uses. This study paves the way for more investigation into the integration of magnetic and logic components in high-performance circuits for use in next-generation computer systems.

Journal of Nanoelectronics and OptoelectronicsVol. 19(12)
Gokula Krishna College of Pharmacy (IN), Hindustan Institute of Technology and Science (IN)
Openalex Percentile: Top 76%
Magnetic properties of thin films
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