Effect of Spacer Dielectrics on Device Performance of a SiGe Based Heterojunction TFETs

In this paper, we propose a nitride spacers based hetero gate-dielectric based tunnel FET device with improved characteristics. SiGe has been used as source material so as to increase the band to band tunneling. Moreover, a hetero dielectric buried oxide (BOX) layer has been used to suppress the ambipolar conduction. The proposed device has ION/IOFF ratio of 3.72 × 1010 and an average sub threshold swing of 28.57 mV/decade. All the simulations have been performed by using a licensed version of Visual TCAD software (version 1.9.3-17).