Design of a CAM Cell from SRAM Using HDL Memristor Logic Synthesizer

This paper uses LTspice, a potent electronic circuit simulation tool, to integrate memristors into circuits for static random access memory (SRAM), presenting a novel technique for building content addressable memory (CAM) cells. Memory devices are essential in developing complex digital logic circuits and integrated circuits. Such memory circuits will be built using static random access memories and content addressable memory cells with the help of memristors. Memristors offer nonvolatile storage capabilities, while CAM cells enable quick retrieval of content-based data. We describe the design approach in detail, emphasizing how LTspice’s simulation and optimization procedures allow seamless Memristor integration. Compared to conventional CAM cell designs, experimental simulations show enhanced performance parameters, including speed, power consumption, and area overhead. This work highlights LTspice’s potential as a valuable instrument for CAM cell technology advancement, boosting effectiveness and dependability in contemporary computing systems.