A Physical LDMOST Model and Predictive Simulations for Advanced Technology CAD

This article describes a compact Lateral DMOS Transistor (LDMOST) model incorporated directly into SPICE source code and presents its application to power IC technology CAD. The complete model combines a previously developed semi-numerical static model and a built-in parasitic component model with a charge-based dynamic model. This composite model is based on device physics; thus, it accounts well for important power MOSFET characteristics such as non-uniformly doped channels, reverse-recovery transients and the non-planar drift region. The measurements from the power MOSFET samples support the predictive model, verified in extensive SPICE simulations of several high-voltage circuits. This LDMOST model might be useful in computer-aided optimal design of smart power ICs.