Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current

The temperature and frequency dependences of the dielectric constant and electrical conductivity of FeGa0.4In1.6Se4 crystals on alternating current have been studied. In the FeGa0.4In1.6Se4 crystal, normal dispersion occurs in the frequency range 2 × 102–104 Hz, and the lifetime distribution of defects obeys the law n(τ) ~ τ−1.75. With increasing temperature, the reason for an increase in the value of the real part of the dielectric constant is an increase in the concentration of defects. The experimentally observed monotonic decrease in the imaginary part of the dielectric constant depending on frequency indicates the presence of relaxation dispersion in the FeGa0.4In1.6Se4 crystal. It has been established that, in the temperature range 294.5–343 K at frequencies 2 × 102–106 Hz, the law σ ~ f S (0.1 ≤ S ≤ 1.0) is satisfied for electrical conductivity. It was shown that the conductivity in those crystals is characterized by a band-hopping mechanism. Activation energies were determined from the $$\log \sigma \sim \frac{{{{{10}}^{3}}}}{T}$$ dependencies.

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Journal
Surface Engineering and Applied Electrochemistry
Published
2024-12-01
DOI
https://doi.org/10.3103/s1068375524700418
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current

F. М. Mammadov, R. M. Agayeva, N. N. Niftiyev, А. О. Dashdemirov
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Surface Engineering and Applied Electrochemistry
Chalcogenide Semiconductor Thin Films
article

Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current

F. М. Mammadov, R. M. Agayeva, N. N. Niftiyev, А. О. Dashdemirov
article en

Abstract

The temperature and frequency dependences of the dielectric constant and electrical conductivity of FeGa0.4In1.6Se4 crystals on alternating current have been studied. In the FeGa0.4In1.6Se4 crystal, normal dispersion occurs in the frequency range 2 × 102–104 Hz, and the lifetime distribution of defects obeys the law n(τ) ~ τ−1.75. With increasing temperature, the reason for an increase in the value of the real part of the dielectric constant is an increase in the concentration of defects. The experimentally observed monotonic decrease in the imaginary part of the dielectric constant depending on frequency indicates the presence of relaxation dispersion in the FeGa0.4In1.6Se4 crystal. It has been established that, in the temperature range 294.5–343 K at frequencies 2 × 102–106 Hz, the law σ ~ f S (0.1 ≤ S ≤ 1.0) is satisfied for electrical conductivity. It was shown that the conductivity in those crystals is characterized by a band-hopping mechanism. Activation energies were determined from the $$\log \sigma \sim \frac{{{{{10}}^{3}}}}{T}$$ dependencies.

Surface Engineering and Applied ElectrochemistryVol. 60(6)
Azerbaijan National Academy of Sciences (AZ), Azerbaijan State Pedagogical University (AZ)
Affordable and clean energy
Openalex Percentile: Top 74%
Chalcogenide Semiconductor Thin Films
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Electrical Properties of FeGa0.4In1.6Se4 at Alternating Current — F. М. Mammadov, R. M. Agayeva, et al. · Surface Engineering and Applied Electrochemistry (2024) | TGRS Research Map | TGRS