Twist Angle-Dependent Exciton Mobility in WS<sub>2</sub> Bilayers

Bilayer WS<sub>2</sub> shows exceptional promise for excitonic devices due to its defect tolerance, high carrier density, and angle-tunable electronic properties. However, fundamental understanding of twist angle-dependent exciton transport remains limited due to challenges in sample preparation and interplays between interlayer coupling and moiré potential. Using transient reflection microscopy (TRM), we systematically studied exciton mobility in chemical vapor deposition-grown (CVD-grown) bilayer WS<sub>2</sub> with different twist angles. At 0°, strong interlayer coupling without moiré potential effects yielded the highest exciton mobility (87.3 cm<sup>2</sup>/V s)- 10-fold greater than monolayer WS<sub>2</sub>-with a 1.06 μm diffusion length, while the 25° sample showed reduced mobility (44.5 cm<sup>2</sup>/(V s)) and shorter diffusion length (0.88 μm) due to weakened coupling and moiré potential effects, and the 60° case exhibited intermediate characteristics. This work demonstrates that interlayer coupling and moiré potential modulation critically determine exciton transport dynamics in layered two-dimensional semiconductors, providing essential guidelines for device engineering.

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Publication Details

Journal
Nano Letters
Published
2025-03-04
DOI
https://doi.org/10.1021/acs.nanolett.5c00027
Citations
9
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
6.57

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article

Twist Angle-Dependent Exciton Mobility in WS2 Bilayers

Wenna Du, Yubo Tian, Long Yuan, Yuexing Xia et al.
9 citations
Nano Letters
Perovskite Materials and Applications
6.57
article

Twist Angle-Dependent Exciton Mobility in WS2 Bilayers

Wenna Du, Yubo Tian, Long Yuan, Yuexing Xia, Jieyuan Liang, Shula Chen, Anlian Pan, Shuai Yue, Dong Li, Yuyang Zhang, Xinfeng Liu, Zheng Yuanyuan, Yangguang Zhong
article en
9 citations

Abstract

Bilayer WS<sub>2</sub> shows exceptional promise for excitonic devices due to its defect tolerance, high carrier density, and angle-tunable electronic properties. However, fundamental understanding of twist angle-dependent exciton transport remains limited due to challenges in sample preparation and interplays between interlayer coupling and moiré potential. Using transient reflection microscopy (TRM), we systematically studied exciton mobility in chemical vapor deposition-grown (CVD-grown) bilayer WS<sub>2</sub> with different twist angles. At 0°, strong interlayer coupling without moiré potential effects yielded the highest exciton mobility (87.3 cm<sup>2</sup>/V s)- 10-fold greater than monolayer WS<sub>2</sub>-with a 1.06 μm diffusion length, while the 25° sample showed reduced mobility (44.5 cm<sup>2</sup>/(V s)) and shorter diffusion length (0.88 μm) due to weakened coupling and moiré potential effects, and the 60° case exhibited intermediate characteristics. This work demonstrates that interlayer coupling and moiré potential modulation critically determine exciton transport dynamics in layered two-dimensional semiconductors, providing essential guidelines for device engineering.

Nano LettersVol. 25(13)
University of Science and Technology of China (CN), Hunan University (CN), Hunan Normal University (CN), Center for NanoScience (DE), Guangdong University of Petrochemical Technology (CN), Division of Materials Science and Engineering (AU), National Center for Nanoscience and Technology (CN), University of Chinese Academy of Sciences (CN), State Key Laboratory of Chemobiosensing and Chemometrics (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Natural Science Foundation of Hunan Province, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China, National Science Fund for Distinguished Young Scholars
Affordable and clean energy
Openalex Percentile: Top 3%
Perovskite Materials and Applications
6.57
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