Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled Segregation

The integration of electron spin qubits on Si/SiGe heterostructures requires precise control of valley splitting associated with conduction band degeneracy. This can be achieved by introducing nanoscale oscillating Ge concentration profiles, known as Wiggle Wells. However, the intermixing and segregation of Ge during growth have hindered their realization. We report the growth of Si/SiGe heterostructures with clear nanoscale composition modulation within the quantum well using molecular beam epitaxy. By oscillation of the growth temperature, Ge segregation is suppressed, achieving a Ge concentration modulation of 30%/nm, an order of magnitude higher than prior results. Tight-binding simulations suggest that Wiggle Well heterostructures with sharp compositional transitions significantly enhance valley splitting, yielding average values exceeding 200 μeV, with energy levels well separated from 0 μeV. Hence, Wiggle Wells are a promising approach for Si-based electronic qubits.

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Publication Details

Journal
Nano Letters
Published
2025-03-04
DOI
https://doi.org/10.1021/acs.nanolett.4c05326
Citations
5
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
6.23

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article

Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled Segregation

Lukas Cvitkovich, Carsten Richter, Yann‐Michel Niquet, Kevin‐P. Gradwohl et al.
5 citations
Nano Letters
Quantum and electron transport phenomena
6.23
article

Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled Segregation

Lukas Cvitkovich, Carsten Richter, Yann‐Michel Niquet, Kevin‐P. Gradwohl, Tibor Grasser, Sebastian Koelling, M. Albrecht, Chen-Hsun Lu, Oussama Moutanabbir, Jens Martin, Maximilian Oezkent, Yujia Liu, Dominic Waldhör
article en
5 citations

Abstract

The integration of electron spin qubits on Si/SiGe heterostructures requires precise control of valley splitting associated with conduction band degeneracy. This can be achieved by introducing nanoscale oscillating Ge concentration profiles, known as Wiggle Wells. However, the intermixing and segregation of Ge during growth have hindered their realization. We report the growth of Si/SiGe heterostructures with clear nanoscale composition modulation within the quantum well using molecular beam epitaxy. By oscillation of the growth temperature, Ge segregation is suppressed, achieving a Ge concentration modulation of 30%/nm, an order of magnitude higher than prior results. Tight-binding simulations suggest that Wiggle Well heterostructures with sharp compositional transitions significantly enhance valley splitting, yielding average values exceeding 200 μeV, with energy levels well separated from 0 μeV. Hence, Wiggle Wells are a promising approach for Si-based electronic qubits.

Nano LettersVol. 25(11)
TU Wien (AT), Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Institute of Microelectronics (CN), Polytechnique Montréal (CA), Leibniz Institute for Crystal Growth (DE), Université Grenoble Alpes (FR)
Canada Foundation for Innovation, Canada Research Chairs, Bundesministerium für Bildung und Forschung, Mitacs, Natural Sciences and Engineering Research Council of Canada, Leibniz-Gemeinschaft, Air Force Office of Scientific Research, Army Research Office, HORIZON EUROPE European Innovation Council
Openalex Percentile: Top 4%
Quantum and electron transport phenomena
6.23
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