Optical absorption and refractive index change of neutral donors in InAs/GaAs camel-like nanostructures: 3D finite element analysis

Spectral and optical properties of neutral donors confined in experimentally grown InAs/GaAs camel-like nanostructures were investigated using the spatial finite element method within the effective mass approximation. The total absorption and refractive index changes were determined by using the compact matrix density formalism. The energy spectrum was found to strongly depend on the donor’s position, with transition energies between the first three low-lying levels below 20 meV (THz band) and further tuneable by applying a static electric field along the “humps”. On-center donor, on-hump donor, and nearly single-electron systems were found to be optically active even at zero electric field. Their optical properties can also be enhanced at specific electric field strengths, a phenomenon linked to the formation of significant dipole moment values and confirmed through volumetric probability density analyses. Additionally, all the systems exhibited a periodic absorption profile with the polarization angle, resembling a “nanoscopic polarizer”. • Investigated optical properties of donors in InAs/GaAs camel-like nanostructures. • Transition energies below 20 meV are tunable via static electric fields. • Optical properties enhanced by dipole moments confirmed by density analyses. • Systems exhibit periodic absorption profiles, acting as “nanoscopic polarizers”.

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Publication Details

Journal
Physica E Low-dimensional Systems and Nanostructures
Published
2025-03-04
DOI
https://doi.org/10.1016/j.physe.2025.116222
Citations
2
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
2.49
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article

Optical absorption and refractive index change of neutral donors in InAs/GaAs camel-like nanostructures: 3D finite element analysis

Ramsés López, N. Hernández, M.R. Fulla
2 citations
Physica E Low-dimensional Systems and Nanostructures
Semiconductor Quantum Structures and Devices
2.49
article

Optical absorption and refractive index change of neutral donors in InAs/GaAs camel-like nanostructures: 3D finite element analysis

Ramsés López, N. Hernández, M.R. Fulla
article en
2 citations

Abstract

Spectral and optical properties of neutral donors confined in experimentally grown InAs/GaAs camel-like nanostructures were investigated using the spatial finite element method within the effective mass approximation. The total absorption and refractive index changes were determined by using the compact matrix density formalism. The energy spectrum was found to strongly depend on the donor’s position, with transition energies between the first three low-lying levels below 20 meV (THz band) and further tuneable by applying a static electric field along the “humps”. On-center donor, on-hump donor, and nearly single-electron systems were found to be optically active even at zero electric field. Their optical properties can also be enhanced at specific electric field strengths, a phenomenon linked to the formation of significant dipole moment values and confirmed through volumetric probability density analyses. Additionally, all the systems exhibited a periodic absorption profile with the polarization angle, resembling a “nanoscopic polarizer”. • Investigated optical properties of donors in InAs/GaAs camel-like nanostructures. • Transition energies below 20 meV are tunable via static electric fields. • Optical properties enhanced by dipole moments confirmed by density analyses. • Systems exhibit periodic absorption profiles, acting as “nanoscopic polarizers”.

Physica E Low-dimensional Systems and NanostructuresVol. 170
Universidad Nacional de Colombia (CO), Institución Universitaria Pascual Bravo (CO)
Openalex Percentile: Top 13%
Semiconductor Quantum Structures and Devices
2.49
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