A smart monolithic integrated IGBT gate driver IC for inverter and PFC applications

This paper presents a smart monolithic integrated IGBT gate driver integrated circuit (IC) which is suitable for the control of 3-phase inverter and power factor correction (PFC). The chip integrates seven channels on a single chip, comprising three high-side and three low-side channels for the control of 3-phase inverter section, and one low-side PFC channel for the control of PFC section. By providing the undervoltage protection (UV), overcurrent protection (OC), and fault logic control, abnormal functionality caused by accidents is suppressed to prevent the power inverter system from failing or malfunctioning. The chip is designed and fabricated using a 600 V 1.0 µm high voltage Bipolar-CMOS-DMOS (BCD) process, in order to achieve high and low voltage circuits monolithic integration, and occupies a core area of only 3500 µm × 2400 µm. Experimental results validated the functionality of the chip. Compared to conventional solutions, this chip has more functions and higher integration, which deliver a complete power stage solution for high performance and cost-effective applications.