Demonstration of optical polarization control for surface emission from <i>c</i>-plane InGaN quantum wells and determination of anisotropic deformation potential in InGaN alloy materials by applying external uniaxial stress

Abstract We proposed that optical polarization of c -plane InGaN quantum well (QW) based vertical-cavity surface-emitting lasers can be controlled by introducing in-plane anisotropic strain and demonstrated by optical measurements that optical anisotropy appeared in InGaN-QW films with anisotropic strain introduced by applying external uniaxial stress. In addition, we have determined the deformation potential D 5 in InGaN alloy materials by analyzing the experimental results based on the k · p perturbation theory and have derived that the value of D 5 is − 2.62 eV and − 2.33 eV for In 0.08 Ga 0.92 N and In 0.16 Ga 0.84 N, respectively.