Semiconductor parameters-depended dynamic behavior in commercial depletion-mode GaN on Si HEMT

• Didactic model focused on fundamental conduction modes in GaN-based devices is analyzed to understand their physical behavior • Physical behavior at the two-dimensional electron gas (2DEG) channel is confirmed from the test circuit-examined waveforms • Predictive analysis and design solutions of the high-frequency circuits is realized using semiconductor parameters-based empirical expressions • Theoretic modeling proposed is intended to be suitable for high-frequency circuit's analysis and further technological research by students and experienced professionals Semiconductor parameters-depended dynamic behavior for the depletion-mode GaN on Si HEMT is discussed using the commercial NPTB00004A device. In accordance with the specifications from manufacturer´s datasheet, conduction modes arising at the n-AlGaN/i-GaN heterojunction are deduced by using fundamental physical principles. Dynamic behavior at the two-dimensional electron gas (2DEG) channel in commercial NPTB00004A device is primarily analyzed from the test circuit-examined waveforms. A didactic model focused on semiconductor parameters-based empirical expressions are derived to obtain R gs , C gs , R ds and X ds as circuit elements. In agreement to the recommended test circuit solution from the manufacturer´s datasheet, circuit elements at frequencies in the range of 0.1 to 1GHz and in the range of 1 to 5GHz are theoretically evaluated. Validation of the didactic model is made for the commercial NPTB00004A device intended to operate in a typical microwave amplifier circuit whose design parameters are compared with those recently published by other authors.